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TrenchStop Series
IKW30N60T q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 30A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K30T60 Package TO-247
C
G
E
P-TO-247-3-1 (TO-220AC)
* * * * *
Type IKW30N60T
Ordering Code Q67040S4717
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
1)
Symbol VCE IC
Value 600 60 30
Unit V A
ICpuls IF
90 90 60 30
IFpuls VGE tSC Ptot Tj Tstg -
90 20 5 187 -40...+175 -55...+175 260 V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 Dev-04
Power Semiconductors
TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA VCE(sat) V G E = 15V, I C = 30A T j = 25 C T j = 17 5 C Diode forward voltage VF V G E = 0V, I F = 3 0 A T j = 25 C T j = 17 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 43 mA, VCE=VGE V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 5s V C C = 400V, T j = 150 C Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 30A V G E = 1 5V T O -247-3- 1 IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 30A 4.1 600 Symbol Conditions RthJA TO-247 AC RthJCD TO-247 RthJC TO-247 Symbol Conditions
IKW30N60T q
Max. Value 0.80 1.05 40 Unit K/W
Value min. typ. 1.5 1.9 1.65 1.6 4.9 max. 2.05 2.05 5.7
Unit
V
A 16.7 40 1000 100 nA S
1630 108 50 167 7 275
-
pF
nC nH A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 Dev-04
Power Semiconductors
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 25 C, V R = 4 00V, I F = 3 0A , di F / dt = 91 0A / s td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 10. 6 , L 1 ) = 136nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKW30N60T q
Value min. Typ. 23 21 254 46 0.69 0.77 1.46 143 0.92 16.3 603 max. ns C A A/s mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 17 5 C V R = 4 00V, I F = 3 0A , di F / dt = 91 0A / s 225 2.39 22.3 310 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 10. 6 L 1 ) = 136nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 24 26 292 90 1.0 1.1 2.1 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 Dev-04
Power Semiconductors
TrenchStop Series
100A
90A 80A
IKW30N60T q
t p=2s 10s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 100H z T C =110C T C =80C
10A 50s
Ic
1A DC
1ms 10ms
Ic
1kH z 10kH z 100kH z
0.1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
160W
50A
IC, COLLECTOR CURRENT
POWER DISSIPATION
40A
120W
30A
80W
20A
Ptot,
40W
10A
0W 25C
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.1 Dev-04
TrenchStop Series
80A 70A 50A V GE =20V 15V 13V 11V 9V 7V V GE =20V
IKW30N60T q
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A
40A
15V 13V
30A
11V 9V
20A
7V
10A
0A 0V 1V 2V 3V 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
50A
2.5V
IC =60A
IC, COLLECTOR CURRENT
40A
2.0V IC =30A
30A
1.5V
20A T J = 1 7 5 C 2 5 C 0A
1.0V
IC =15A
10A
0.5V
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.1 Dev-04
TrenchStop Series
IKW30N60T q
t d(off)
t d(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
tf 100ns
10ns tr
t d(on)
tr
1ns
0A
10A
20A
30A
10ns
10
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
7V 6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t d(off)
100ns tf
t d(on)
tr 10ns 25C
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
50C
75C
100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA)
Power Semiconductors
6
Rev. 2.1 Dev-04
TrenchStop Series
*) Eon and Ets include losses due to diode recovery
IKW30N60T q
5.0mJ
Ets*
*) E on a nd E ts include losses d ue to diode re co ve ry E ts * 3.0m J
E, SWITCHING ENERGY LOSSES
4.0mJ
E, SWITCHING ENERGY LOSSES
3.0mJ
E off 2.0m J
2.0mJ
Eoff
1.0m J E on *
1.0mJ Eon* 0A 10A 20A 30A 40A 50A
0.0mJ
0.0m J
0 10 20 30 40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
1.6mJ 1.4mJ 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ
*) Eon and Ets include losses due to diode recovery
Ets*
*) E on and E ts include losses 3.0m J due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.5m J 2.0m J E ts * 1.5m J 1.0m J 0.5m J 0.0m J 300V E on * E off
Eoff
Eon*
0.0mJ 25C
50C
75C
100C 125C 150C
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1 Dev-04
TrenchStop Series
IKW30N60T q
C iss
VGE, GATE-EMITTER VOLTAGE
1nF
1 5V 12 0V 1 0V 48 0V
c, CAPACITANCE
5V
100pF
C oss
C rss
0V 0nC 3 0nC 6 0n C 90 nC 12 0nC 150 nC 1 80n C
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
400A
SHORT CIRCUIT WITHSTAND TIME
10s 8s 6s 4s 2s 0s 10V
300A
200A
tSC,
100A
0A 12V
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.1 Dev-04
TrenchStop Series
IKW30N60T q
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0.2 10 K/W
-1
10 K/W D=0.5
0
0.1 0.05
R,(K/W) 0.29566 0.25779 0.19382 0.05279
6.478*10 -3 6.12*10 -4 4.679*10 -5 6.45*10
R2
, (s)
0.2 0.1 10 K/W
-1
-2
0.02 10 K/W
-2
R1
R,(K/W) 0.19517 0.26773 0.31252 0.05 0.22545 0.04916
, (s) -1 1.079*10 -2 1.546*10 -3 2.297*10 -4 2.234*10 -6 7.5*10
R2
6
0.01
C1= 1/R1
C2=2/R2
0.02 0.01
-2
R1
single pulse
C1= 1/R1
C2= 2/R2
1s
10s 100s
1ms
10ms 100ms
10 K/W 100ns 1s 10s 100s 1ms 10ms100ms
single pulse
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
250ns
200ns
Qrr, REVERSE RECOVERY CHARGE
TJ=175C
T J =175C
2.0C
trr, REVERSE RECOVERY TIME
1.5C
150ns
1.0C
100ns
T J =25C
0.5C
50ns
TJ=25C
0ns 700A/s
800A/s
900A/s 1000A/s
0.0C 700A/s
800A/s
900A/s
1000A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=30A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 30A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.1 Dev-04
TrenchStop Series
IKW30N60T q
T J=25C
T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
20A
-600A/s
15A
T J =25C
-450A/s
T J=175C
-300A/s
10A
5A
-150A/s
Irr,
0A
700A/s
800A/s
900A/s
1000A/s
0A/s 700A/s
800A/s
900A/s
1000A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 30A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=30A, Dynamic test circuit in Figure E)
70A 60A
T J =25C 175C
2.0V
I F =60A
50A 40A 30A 20A 10A 0A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
30A
1.0V
15A
0.5V
0V
1V
2V
0.0V 0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.1 Dev-04
TrenchStop Series
IKW30N60T q
dimensions
TO-247AC
symbol
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 3.61 6.12
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409
A B C D E F G H K L M N
P
0.76 max
0.0299 max
0.1421
Q
Power Semiconductors
11
Rev. 2.1 Dev-04
TrenchStop Series
i,v diF /dt
IKW30N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
12
Rev. 2.1 Dev-04
TrenchStop Series
IKW30N60T q
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.1 Dev-04

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